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APT5513B2FLL APT5513LFLL 550V 41A 0.130 POWER MOS 7 (R) R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE T-MAXTM TO-264 LFLL D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5513 UNIT Volts Amps 550 41 164 30 40 500 4.0 -55 to 150 300 41 35 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 550 41 0.130 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 20.5A) Ohms A nA Volts 3-2003 050-7193 Rev A Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT5513B2FLL - LFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 41A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 41A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 367V, VGS = 15V ID = 41A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 367V VGS = 15V ID = 41A, RG = 5 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 4268 838 60 98 25 55 14 11 30 5 517 431 796 501 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 41 164 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -41A) dv/ 5 dt t rr Reverse Recovery Time (IS = -41A, di/dt = 100A/s) Reverse Recovery Charge (IS = -41A, di/dt = 100A/s) Peak Recovery Current (IS = -41A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient 250 500 2.16 5.57 15.5 22.4 TYP MAX Q rr IRRM C Amps THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W 0.25 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.30 , THERMAL IMPEDANCE (C/W) 4 Starting Tj = +25C, L = 1.90mH, RG = 25, Peak IL = 41A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID41A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.20 0.7 0.5 0.3 0.1 0.05 0.15 Note: PDM t1 t2 3-2003 0.10 JC 050-7193 Rev A 0.05 Z SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 Typical Performance Curves 120 RC MODEL APT5513B2FLL - LFLL VGS =15 & 10V ID, DRAIN CURRENT (AMPERES) Junction temp. ( "C) 0.0526 0.000456F 100 7.5V 7V 80 Power (Watts) 60 6.5V 6V 5.5V 5V 0.107 0.0121F 40 20 0 0.0898 Case temperature 0.338F RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS NORMALIZED TO = 10V @ 20.5A ID, DRAIN CURRENT (AMPERES) 100 80 1.30 1.20 VGS=10V 60 1.10 40 TJ = +125C 20 0 TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = -55C 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 45 40 ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) I D 1.15 35 30 25 20 15 10 5 0 25 1.10 1.05 1.00 0.95 0.90 0.85 -50 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 = 20.5A V GS -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 10V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 2.0 1.1 1.0 1.5 0.9 0.8 1.0 0.5 0.7 0.6 -50 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7193 Rev A 3-2003 APT5513B2FLL - LFLL 165 100 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 20,000 10,000 Ciss C, CAPACITANCE (pF) 1,000 Coss 10 100S TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 550 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 100 Crss 1mS 10mS 10 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 = 41A 200 100 12 VDS=110V VDS=275V TJ =+150C TJ =+25C 10 8 VDS=440V 4 40 80 120 160 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 100 0 0 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80 V DD G = 367V R = 5 80 td(on) and td(off) (ns) V = 367V td(off) 60 tr and tf (ns) T = 125C J tf L = 100H 60 DD G R = 5 T = 125C J 40 L = 100H 40 20 20 td(on) 0 5 35 45 55 65 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G tr 0 15 25 35 45 55 65 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 2500 5 15 25 1600 = 367V R = 5 T = 125C 1200 L = 100H E ON includes diode reverse recovery. SWITCHING ENERGY (J) J SWITCHING ENERGY (J) Eon 2000 Eoff 1500 Eon 1000 V I DD 800 = 367V 3-2003 400 Eoff 0 35 45 55 65 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 5 15 25 D J = 41A 500 T = 125C L = 100H E ON includes diode reverse recovery. 050-7193 Rev A 0 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5 Typical Performance Curves Gate Voltage APT5513B2FLL - LFLL 10 % T = 125 C J td(on) 90% tr 5% 10 % 5% Drain Voltage 90% Gate Voltage T = 125 C J td(off) Drain Voltage Drain Current 90% tf 10% 0 Drain Current Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF60B V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7193 Rev A 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 3-2003 Gate Drain Source Gate Drain Source |
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